代表性文章或专著
(1)Yuejin Wang, Guozhen Liu, Shiqiang Lu, Bin Guo, Hongye Zhang, Fuchun Xu, Xiaohong Chen*, Duanjun Cai*, Surface Current Improvement of Magnesium-Doped Hexagonal Boron Nitride Monolayer by Additional Nitrogen Gas Flow, Journal of Electronic Packaging, 2020, 142, 031103
(2)Zongxing Huang, Zhibai Zhong, Huachun Wang, Shiqiang Lu, Jun Wang, Guozhen Liu, Tongbo Wei, Jianchang Yan, Jung-Hong Min, Woo Lim Jeong, Dong-Seon Lee, Xuefen Cai, Fuchun Xu, Xiaohong Chen*, Duanjun Cai*, Junxi Wang, and Junyong Kang, Enhanced Emission of Deep Ultraviolet Light-Emitting Diodes through Using Work Function Tunable Cu Nanowires as the Top Transparent Electrode, J. Phys. Chem. Lett. 2020, 11, 2559−2569
(3)Youyang Huang, Zongxing Huang, Zhibai Zhong, Xu Yang, Qiming Hong, Huachun Wang, Shengrong Huang, Na Gao, Xiaohong Chen*, Duanjun Cai*, Junyong Kang, Highly transparent light emitting diodes on graphene ncapsulated Cu nanowires network, Scientific Reports, 2018, 8:13721
(4)Huachun Wang, Chenping Wu, Youyang Huang, Feipeng Sun, Na Lin, Abdul Majid Soomro, Zhibai Zhong, Xiaodong Yang, Xiaohong Chen*, Junyong Kang, Duanjun Cai*, One-Pot Synthesis of Superfine Core-ShellCu@metalNanowires for Highly Tenacious Transparent LED Dimmer, ACS Applied Materials & Interfaces，2016, 8(42): 28709~28717
(5)Xiaohong Chen, Na Lin, Fuchun Xu, Hangyang Chen, Duanjun Cai*, and Junyong Kang*, “Ideal square quantum wells achieved in AlGaN/GaN superlattices using ultrathin blocking-compensation pair”, Applied Physics Letters, 2015, 106(11): 111604
(6)Xiaohong Chen, Na Lin, Yong Zhang, Hangyang Chen, Duanjun Cai*, and Junyong Kang*, “Symmetrically abrupt GaN/AlGaN superlattices by alternative interface–interruption scheme”, Journal of Materials Research, 2013, 28(5), 716-722
(7)Xiaohong Chen, Shuping Li, Junyong Kang*, “Initial process effects on the surface morphology and structural property of the AlN epilayers”, Journal of Materials Science: Materials in electronics, 2008, 19: S215-S218
(8)Duanjun Cai, Xiaohong Chen, Hongmei Xu, Na Lin, Fuchun Xu, and Hangyang Chen, “Abruptness improvement of the interfaces of AlGaN/GaN superlattice by cancelling asymmetric diffusion”, Japanese Journal of Applied Physics, 2013, 52: 08JB30
