时 间：2018年11月9日（周五）下午14：30

地 点：物理大楼552

主 讲 人：韩根全 教授

研究方向：半导体器件物理

韩根全，西安电子科技大学微电子学院教授，优秀青年基金获得者。在高迁移率非硅材料CMOS器件、隧穿晶体管以及负电容晶体管器件研制方面取得了国际领先的研究成果，相关研究成果被Semiconductor Today等网站多次转载。发表论文160多篇，在IEEE顶级会议International Electron Devices Meeting (IEDM) 和 VLSI Symposium on Technology (VLSI) 上发表多篇文章。

Abstract：The evolution of Complementary Metal-Oxide-Semiconductor (CMOS) technology is coming to a stage where geometric device scaling alone does not promise the historical pace of improvement in integrated circuit (IC) performance. Without the use of new materials or new mechanism, it is difficult to enhance the drive current or computational speed while keeping the off-state leakage current or power consumption low. Research efforts were devoted to exploring the beyond CMOS devices with sub-60 mV/decade SS for ultralow power applications. Negative capacitance (NC) FETs were proposed as the promising alternatives, with capability of steepening the SS. In this talk, the latest research progress and the underlying mechanism of NCFETs will be discussed.